Dynamics of transient hole doping in epitaxial graphene

This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from data. understanding reversible without gating is crucial importance to those fabricating a particular functionality. Measurements electrical and optical properties several postexposure were performed transport temperatures between 300 1.5 K. Ambient conditions applied nontransport measurements replicate most likely laboratory for handling this method. relevant compared results Raman spectroscopy measurements.